Details

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BUY IRLZ44N IRLZ44NPBF MOS 47A 55V TO-220 https://www.utsource.net/itm/p/11721179.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	0.017	-	Ω	VGS = 10V, ID = 47A
Gate-Source Threshold Voltage	VGS(th)	1.0	-	2.0	V	ID = 250μA
Continuous Drain Current	ID	-	-	47	A	TC = 25°C
Pulse Drain Current	ID(PULSE)	-	-	110	A	t = 10ms, TC = 25°C
Maximum Drain-Source Voltage	VDSS	-	-	55	V	-
Gate-Source Voltage	VGS	-	-	±20	V	-
Total Power Dissipation	PD	-	-	64	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C	-
Storage Temperature Range	TSTG	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions: The IRLZ44N/IRLZ44NPBF is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
2. Mounting: Ensure proper heat sinking if operating near maximum current or power dissipation limits to maintain junction temperature within specified range.
3. Gate Drive: For optimal performance, ensure gate drive voltage meets the threshold requirements. Typical operation uses VGS ≥ 10V for minimum RDS(on).
4. Pulse Operation: When using in pulse applications, verify that pulse width and frequency do not exceed safe operating area limits.
5. Storage and Operating Temperatures: Store and operate within the specified temperature ranges to avoid damage or reduced performance.
6. PCB Layout: Design PCB layout to minimize parasitic inductances and resistances, especially for high-frequency switching applications.

(For reference only)