TF29S50

TF29S50

Category: Transistors

Specifications
Details

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Parameter Description Value Unit
Part Number Full part number TF29S50 -
Type Device type MOSFET -
Configuration Channel configuration N-Channel -
VDS (Max) Drain-source voltage 50 V
RDS(on) (Max) On-resistance 4.5
ID (Max) Continuous drain current 16.8 A
PD (Max) Power dissipation 270 mW
VGS(th) (Max) Gate threshold voltage 2.5 V
Qg (Total) Total gate charge 32.7 nC
EAS (Max) Avalanche energy 22.6 mJ
Package Packaging type SOT-23 -
Operating Temp Operating temperature range -55 to 150 °C

Instructions:

  1. Handling and Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid damage to the leads and body.
  2. Mounting:

    • Ensure correct orientation during installation to prevent short circuits.
    • Use appropriate soldering techniques and temperatures to avoid thermal shock.
  3. Electrical Connections:

    • Verify all connections are secure and meet the electrical specifications provided.
    • Do not exceed the maximum ratings specified for VDS, ID, and PD to ensure reliable operation.
  4. Testing:

    • Perform initial testing under controlled conditions to verify functionality.
    • Regularly inspect for signs of wear or damage, especially in high-stress applications.
  5. Applications:

    • Suitable for use in switching power supplies, motor control circuits, and general-purpose switching applications where low on-resistance is required.
(For reference only)

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