Details

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BUY PDTC123ET215 https://www.utsource.net/itm/p/11722978.html

Parameter	Description	Value	Unit
Part Number	Product Identifier	PDTC123ET215	-
Type	Device Type	MOSFET	-
Configuration	Channel Configuration	N-Channel	-
VDS	Drain-to-Source Voltage	60	V
RDS(on)	On-State Resistance at VGS = 10V	4.5	mΩ
ID	Continuous Drain Current	18	A
VGS(th)	Gate Threshold Voltage	2.5 to 4.5	V
Qg	Total Gate Charge	67	nC
Package	Component Package Type	TO-252 (DPAK)	-
Operating Temp	Operating Temperature Range	-55 to 150	°C

Instructions:

1. Installation: Ensure the device is handled with care to avoid damage to the leads and body. Use appropriate tools for mounting.
2. Soldering: Follow standard soldering practices. Avoid excessive heat to prevent damage. Recommended soldering temperature: 260°C for no more than 10 seconds.
3. Handling: Use ESD-safe procedures when handling the device to prevent electrostatic discharge damage.
4. Storage: Store in a dry, cool place away from direct sunlight and corrosive substances.
5. Application: Verify that the operating conditions (voltage, current, temperature) do not exceed the specified limits.
6. Testing: Before final assembly, test the device under typical operating conditions to ensure functionality.

(For reference only)