Details

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BUY 2N7002,215 https://www.utsource.net/itm/p/11723130.html

Parameter	2N7002	2N215
Type	N-Channel MOSFET	PNP Bipolar Transistor
Vds (V) / Vce (V)	60	40
Vgs (V) / Vbe (V)	卤20	5
Id (A) / Ic (A)	0.2	0.5
Pd (W)	0.37	0.625
Rds(on) (惟) @ Vgs = 10V	6.5	-
fT (MHz)	-	100
Storage Temperature (掳C)	-65 to +150	-65 to +150
Operating Temperature (掳C)	-55 to +150	-65 to +150
Package	SOT-23	TO-92

Instructions for Use:

2N7002:

1. Biasing:
   • Apply a positive gate-to-source voltage (Vgs) to turn on the MOSFET.
   • Ensure Vgs does not exceed 卤20V to avoid damage.
2. Current Handling:
   • The maximum drain current (Id) is 0.2A.
   • Keep the power dissipation (Pd) below 0.37W.
3. Thermal Management:
   • Operate within the temperature range of -55掳C to +150掳C.
   • Ensure proper heat sinking if operating near maximum current or power.

2N215:

1. Biasing:
   • Apply a forward base-emitter voltage (Vbe) to turn on the transistor.
   • Ensure Vbe does not exceed 5V to avoid damage.
2. Current Handling:
   • The maximum collector current (Ic) is 0.5A.
   • Keep the power dissipation (Pd) below 0.625W.
3. Thermal Management:
   • Operate within the temperature range of -65掳C to +150掳C.
   • Ensure proper heat sinking if operating near maximum current or power.
4. Frequency Considerations:
   • The transistor has a transition frequency (fT) of 100 MHz, suitable for high-frequency applications.

(For reference only)