UF808F

UF808F

Category: Transistors

Specifications
SKU
11724639
Details

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Parameter Symbol Value Unit
Maximum Reverse Voltage VRM 100 V
Maximum Rectified Current (Non-repetitive) IORM 8 A
Maximum Rectified Current (Repetitive) IORMR 3 A
Maximum RMS Current IRMS 3.5 A
Forward Voltage at IF = 1A VF 1.1 V
Maximum Power Dissipation PD 60 W
Junction Temperature Range TJ -55 to +175 掳C
Storage Temperature Range TSTG -55 to +150 掳C
Operating Temperature Range TOPR -55 to +125 掳C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the junction temperature, especially when operating at high currents.
    • Use a thermal compound between the component and the heatsink to improve thermal conductivity.
  2. Electrical Connections:

    • Connect the diode with the correct polarity. The cathode is marked on the package.
    • Use short leads to minimize inductance and parasitic effects.
  3. Thermal Management:

    • Monitor the junction temperature to ensure it does not exceed the maximum specified limit of 175掳C.
    • If operating near the maximum power dissipation, consider forced air cooling or a larger heatsink.
  4. Surge Current Handling:

    • The diode can handle non-repetitive surge currents up to 8A. Ensure that any transient conditions do not exceed this limit.
  5. Storage:

    • Store the diode in a dry, cool place within the storage temperature range of -55掳C to +150掳C.
    • Avoid exposure to high humidity and corrosive environments.
  6. Handling:

    • Handle the diode with care to avoid mechanical damage.
    • Use appropriate ESD protection to prevent damage from static electricity.
  7. Testing:

    • Before installation, test the diode for forward and reverse characteristics to ensure it meets the specified parameters.
    • Use a multimeter or a dedicated diode tester for these tests.
(For reference only)

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