Details

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BUY IXTQ69N30P 69A 300V TO-3P https://www.utsource.net/itm/p/11724652.html

Parameter	Value	Unit
Maximum Drain Current (IDM)	69	A
Maximum Drain-Source Voltage (VDS)	300	V
Maximum Gate-Source Voltage (VGS)	±20	V
Continuous Drain Current (ID) at 25°C	41.4	A
Continuous Drain Current (ID) at 100°C	27.6	A
Power Dissipation (PD) at 25°C	180	W
Power Dissipation (PD) at 100°C	120	W
Junction Temperature (TJ)	-55 to 150	°C
Storage Temperature (TSTG)	-55 to 150	°C
Package Type	TO-3P	-

Instructions for Use:

1. Mounting: Ensure the TO-3P package is mounted with appropriate heat sinking to manage thermal resistance and maintain operational temperature within specified limits.
2. Voltage Handling: Do not exceed the maximum drain-source voltage (VDS) of 300V to prevent device damage.
3. Current Limits: Operate within the continuous drain current (ID) limits, especially considering the ambient temperature effects on current ratings.
4. Gate Drive: Apply gate voltages within the ±20V limit to avoid damaging the gate oxide.
5. Power Dissipation: Keep power dissipation within rated values by ensuring adequate cooling or reducing load conditions if necessary.
6. Temperature Management: Monitor junction temperature (TJ) to ensure it remains between -55°C and 150°C for reliable operation.
7. Storage Conditions: Store the device in an environment where temperatures range from -55°C to 150°C to maintain its integrity.
8. Handling Precautions: Handle with care to avoid electrostatic discharge (ESD) which can damage the semiconductor components.

(For reference only)