2SK2401,K2401

2SK2401,K2401

Category: Transistors

Specifications
Details

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Parameter 2SK2401/K2401
Type N-Channel MOSFET
VDS (Max Drain-Source Voltage) ±500 V
ID (Continuous Drain Current) 2 A
PD (Total Power Dissipation) 12.5 W
RDS(on) (On-Resistance) 2.5 Ω @ VGS=10V, ID=1A
Input Capacitance (Ciss) 800 pF
Transfer Characteristics Refer to datasheet for typical curves
Operating Temperature Range -55°C to +150°C
Storage Temperature Range -55°C to +150°C
Package Type TO-220

Instructions for Use:

  1. Handling Precautions: The 2SK2401/K2401 is sensitive to ESD (Electrostatic Discharge). Use proper ESD protection measures during handling and installation.
  2. Mounting: Ensure the device is securely mounted with adequate heat sinking if operating near maximum power dissipation limits.
  3. Biasing: Apply gate-source voltage (VGS) within specified limits to avoid damage or unreliable operation.
  4. Testing: When testing the device, ensure that all voltages and currents are within the specified ratings to prevent damage.
  5. Heat Management: Monitor junction temperature; use heatsinks or cooling solutions if necessary to maintain within safe operating temperatures.
  6. Refer to Datasheet: For detailed transfer characteristics and specific application notes, refer to the manufacturer’s datasheet.
(For reference only)

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