Details

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BUY 2SK2962,K2962 https://www.utsource.net/itm/p/11725083.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	V(DS)	-	-	500	V
Gate-Source Voltage	V(GS)	-20	-	10	V
Continuous Drain Current	I(D)	-	30	-	A
Pulse Drain Current	I(DM)	-	60	-	A	t = 10 渭s, I(GS) = 0 A
Power Dissipation	P(T)	-	250	-	W	T(C) = 25掳C
Junction Temperature	T(J)	-	-	175	掳C
Storage Temperature	T(STG)	-55	-	150	掳C

Instructions for Use:

1. Handling:

   • Handle with care to avoid damage to the leads and the body of the device.
   • Use appropriate ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within safe limits.
   • Use thermal compound between the device and the heat sink to improve thermal conductivity.

3. Biasing:

   • Apply the gate-source voltage (V(GS)) within the specified range to avoid damaging the gate oxide.
   • Ensure the drain-source voltage (V(DS)) does not exceed the maximum rating to prevent breakdown.

4. Current Handling:

   • Do not exceed the continuous drain current (I(D)) or pulse drain current (I(DM)) ratings.
   • For pulse operation, ensure the pulse width and frequency are within the specified limits to avoid overheating.

5. Thermal Management:

   • Monitor the junction temperature (T(J)) to ensure it does not exceed 175掳C.
   • Store the device in a temperature-controlled environment within the storage temperature range (-55掳C to 150掳C).

6. Testing:

   • Use appropriate test equipment and methods to verify the performance of the device.
   • Follow the datasheet specifications for testing parameters and conditions.

7. Applications:

   • Suitable for high-power switching applications, such as power supplies, motor control, and inverters.
   • Ensure the device is used within its operational limits for reliable performance and longevity.

(For reference only)