Details

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BUY GPT13N50DG https://www.utsource.net/itm/p/11728200.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCE	500	V
Collector Current	IC	13	A
Emitter-Base Voltage	VEB	5	V
Base Current	IB	1.3	A
Power Dissipation	PT	125	W
Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	TSTG	-65 to +150	掳C
Case Type		TO-220

Instructions for Use:

1. Mounting:

   • Ensure proper heat dissipation by using a heatsink if necessary.
   • Mount the transistor with the correct orientation to avoid damage.

2. Electrical Connections:

   • Connect the collector (C) to the high voltage side of the circuit.
   • Connect the emitter (E) to the low voltage side or ground.
   • Connect the base (B) to the control circuit.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure that the junction temperature remains within the specified range to prevent thermal runaway.

4. Storage:

   • Store in a dry, cool place to avoid moisture damage.
   • Handle with care to prevent mechanical stress on the leads and case.

5. Testing:

   • Use appropriate test equipment to verify the functionality of the transistor.
   • Test under controlled conditions to avoid exceeding safe operating limits.

6. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use protective equipment such as gloves and goggles when handling the transistor.

(For reference only)