Details

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BUY W13NK60Z https://www.utsource.net/itm/p/11737635.html

Parameter	Symbol	Min	Typical	Max	Unit	Description
Breakdown Voltage	V(BR)DSS	-	600	-	V	Drain-to-Source Breakdown Voltage
Continuous Drain Current	ID	-	13	-	A	Continuous Drain Current (Tc = 25掳C)
Pulse Drain Current	Ipp	-	78	-	A	Non-repetitive Peak Pulse Current (Tc = 25掳C, t = 10 渭s)
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Gate Threshold Voltage
On-State Resistance	RDS(on)	-	0.18	-	惟	On-State Resistance at VGS = 10V, ID = 13A
Total Power Dissipation	PD	-	130	-	W	Total Power Dissipation (Tc = 25掳C)
Junction Temperature	Tj	-	-	175	掳C	Maximum Junction Temperature
Storage Temperature Range	Tstg	-55	-	150	掳C	Storage Temperature Range

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid mechanical damage.
   • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting and Soldering:

   • Ensure that the device is mounted on a suitable heatsink to manage heat dissipation.
   • Follow recommended soldering profiles to avoid thermal shock and ensure good electrical connections.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure that the junction temperature does not exceed 175掳C to prevent thermal runaway and device failure.
   • For continuous operation, keep the drain current within the rated limits to avoid overheating.

4. Gate Drive:

   • Apply a gate voltage between the minimum and maximum gate threshold voltages to turn the device on.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

5. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range to maintain its performance and reliability.

6. Testing:

   • Before using the device in a circuit, perform initial testing to verify its parameters and functionality.
   • Use appropriate test equipment and methods to ensure accurate measurements.

7. Circuit Design:

   • Incorporate necessary protection circuits such as overvoltage and overcurrent protection to safeguard the device.
   • Consider the use of snubber circuits to mitigate voltage spikes during switching.

By following these guidelines, you can ensure optimal performance and longevity of the W13NK60Z MOSFET.

(For reference only)