Details

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BUY STW48NM60N 48NM60N STW48NM60 TO-247/3P https://www.utsource.net/itm/p/11738042.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-	600	-	V
Gate-Source Voltage	VGS	-15	0	20	V
Continuous Drain Current	ID	-	48	-	A	@ TC = 25掳C
Pulse Drain Current	ID pul	-	150	-	A	tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	300	-	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance	R胃JC	-	0.6	-	K/W

Instructions:

1. Handling and Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads and body.

2. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within safe limits.
   • Use a thermal compound between the device and the heat sink for better thermal conductivity.

3. Electrical Connections:

   • Apply gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Ensure that the drain current (I_D) does not exceed the continuous or pulse ratings.

4. Operational Considerations:

   • Monitor the junction temperature (T_J) to prevent overheating.
   • Use appropriate derating factors for operation at higher ambient temperatures.

5. Safety:

   • Follow all safety guidelines for high-voltage and high-current applications.
   • Ensure proper insulation and grounding to prevent electrical hazards.

6. Testing:

   • Perform initial testing under controlled conditions to verify performance and reliability.
   • Regularly inspect the device for signs of wear or damage.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)