Details

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BUY 2N5088TA https://www.utsource.net/itm/p/11741627.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	-	40	V	IC = 0, IB = 0
Collector-Base Voltage	V(BR)CBO	-	-	50	V	IE = 0
Emitter-Base Voltage	V(BR)EBO	-	-	6	V	IC = 0
Collector Current	IC	-	150	-	mA	VCE = 30V
Base Current	IB	-	1.5	-	mA	VCE = 30V, IC = 150mA
Power Dissipation	PD	-	-	350	mW	TA = 25掳C
Forward Current Transfer Ratio	hFE	300	600	1100	-	IC = 10mA, VCE = 10V

Instructions for Use:

1. Mounting: Ensure the 2N5088TA is securely mounted to prevent mechanical stress on the leads and to ensure good thermal contact if heat dissipation is a concern.

2. Biasing: Proper biasing of the base-emitter junction is crucial to avoid excessive current that can lead to overheating and damage. Use appropriate resistors to limit base current.

3. Operating Temperature: The device is rated for operation between -65掳C and +150掳C. However, performance may degrade at temperature extremes.

4. Storage: Store in a dry, cool place away from direct sunlight and corrosive substances.

5. Handling: Handle with care to avoid static damage. Use anti-static precautions when handling or soldering.

6. Soldering: Do not exceed temperatures of 260掳C for more than 10 seconds during soldering to prevent damage to the transistor.

7. Testing: When testing the device, ensure all safety protocols are followed and use protective equipment as necessary.

(For reference only)