Details

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Parameter	Value
Type	N-Channel MOSFET
VDS (Max) (V)	600
RDS(on) (m惟)	300 at VGS = 10V
ID (Max) (A)	30
Power Dissipation (W)	270
Package	TO-247
Operating Temperature (掳C)	-55 to +150
Gate Charge (Qg) (nC)	95 at VGS = 15V
Input Capacitance (Ciss) (pF)	2200 at VDS = 400V
Output Capacitance (Coss) (pF)	530 at VDS = 400V
Reverse Transfer Capacitance (Crss) (pF)	1150 at VDS = 400V
Thermal Resistance (R胃JC) (掳C/W)	0.78
Storage Temperature (掳C)	-55 to +150

Instructions for Use

1. Handling Precautions:

   • Handle the device with care to avoid damage to the pins and the die.
   • Use proper ESD protection when handling the device to prevent electrostatic discharge damage.

2. Mounting:

   • Ensure that the mounting surface is clean and free from contaminants.
   • Apply a suitable thermal compound between the device and the heatsink to improve thermal conductivity.
   • Tighten the mounting screws to the recommended torque specifications to ensure good thermal contact.

3. Electrical Connections:

   • Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
   • Ensure that the gate drive voltage is within the specified range to avoid damaging the device.
   • Use short, low-inductance leads to minimize parasitic inductance effects.

4. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature within the operating limits.
   • Monitor the temperature of the device during operation and adjust the cooling as necessary.

5. Testing:

   • Test the device in a controlled environment to ensure it meets the specified parameters.
   • Use appropriate test equipment and procedures to avoid overstressing the device.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against moisture and physical damage.

(For reference only)