Details

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BUY NTP45N06 https://www.utsource.net/itm/p/11742094.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Drain-Source Voltage	VDS	-	-	60	V	-
Gate-Source Voltage	VGS	-10	-	20	V	-
Continuous Drain Current	ID	-	-	45	A	TC = 25掳C
Pulse Drain Current	ID(pulse)	-	-	135	A	tp = 10 ms, TC = 25掳C
Gate Charge	QG	-	70	-	nC	VGS = 10V
Input Capacitance	Ciss	-	1300	-	pF	VDS = 0V, f = 1 MHz
Output Capacitance	Coss	-	290	-	pF	VDS = 25V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	100	-	pF	VDS = 25V, f = 1 MHz
RDS(on) at VGS = 10V	RDS(on)	-	5.5	-	m惟	ID = 45A, TC = 25掳C
RDS(on) at VGS = 4.5V	RDS(on)	-	8.5	-	m惟	ID = 45A, TC = 25掳C
Total Power Dissipation	PTOT	-	-	175	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Voltage Handling:

   • Ensure that the drain-source voltage (V_DS) does not exceed 60V to prevent breakdown.
   • The gate-source voltage (V_GS) should be kept between -10V and 20V to avoid damage.

2. Current Handling:

   • The continuous drain current (I_D) should not exceed 45A at a case temperature of 25掳C.
   • For pulse applications, the peak drain current (I_D(pulse)) can reach up to 135A for a pulse duration of 10 ms at a case temperature of 25掳C.

3. Thermal Management:

   • The total power dissipation (P_TOT) should not exceed 175W at a case temperature of 25掳C.
   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.

4. Capacitance Considerations:

   • Account for the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) when designing circuits to minimize switching losses and ensure stable operation.

5. Storage Conditions:

   • Store the device in a controlled environment with temperatures ranging from -55掳C to 150掳C to maintain reliability.

6. Gate Drive:

   • Use appropriate gate drive circuits to ensure that the gate charge (Q_G) is managed effectively, especially during high-frequency switching operations.

7. Mounting:

   • Ensure proper mounting and thermal management to dissipate heat effectively. Use heatsinks or cooling solutions as necessary.

8. ESD Protection:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage. Use ESD protective equipment and follow standard ESD handling procedures.

(For reference only)