Details

---

BUY 2SA1015GR,2SA1015-GR,A1015GR https://www.utsource.net/itm/p/11743086.html

Parameter	Symbol	Min	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	80	V	IC = 0.1A, TA = 25掳C
Collector-Base Voltage	VCBO	-	80	V	IC = 0, TA = 25掳C
Emitter-Base Voltage	VEBO	-	5	V	IE = 5mA, TA = 25掳C
Collector Current	IC	-	0.5	A	VCE = 30V, TA = 25掳C
Base Current	IB	-	0.05	A	VCE = 30V, TA = 25掳C
Power Dissipation	PT	-	625	mW	TC = 25掳C
Operating Temperature	TA	-55	150	掳C	-
Storage Temperature	TSTG	-55	150	掳C	-
DC Current Gain	hFE	20	400	-	IC = 50mA, VCE = 10V
Transition Frequency	fT	-	300	MHz	IC = 1mA, VCE = 3V

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside the specified operating range.
   • Use appropriate heat sinks if the power dissipation exceeds safe levels.

2. Mounting:

   • Ensure proper alignment and secure mounting to prevent mechanical stress.
   • Use thermal paste between the transistor and heat sink for efficient heat dissipation.

3. Biasing:

   • Ensure that the base current is within the specified limits to avoid damage to the transistor.
   • Use a resistor in series with the base to limit the current.

4. Testing:

   • Test the transistor under controlled conditions to ensure it meets the specified parameters.
   • Use a multimeter or transistor tester to verify the functionality.

5. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight.
   • Keep the transistor in its original packaging until ready for use to prevent static damage.

6. Soldering:

   • Use a soldering iron with a temperature of around 300掳C to 350掳C.
   • Solder quickly to avoid overheating the transistor.

7. Applications:

   • Suitable for general-purpose amplification and switching applications.
   • Can be used in audio amplifiers, power supplies, and control circuits.

(For reference only)