Details

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BUY IRFB4227 IRFB4227PBF TO-220 https://www.utsource.net/itm/p/11743262.html

Parameter	Symbol	Value	Unit
Maximum Drain-Source Voltage	VDSS	55	V
Maximum Gate-Source Voltage	VGSS	卤20	V
Maximum Continuous Drain Current (TC=25掳C)	ID(25掳C)	78	A
Maximum Continuous Drain Current (TC=100掳C)	ID(100掳C)	53	A
Maximum Pulse Drain Current (tp=10渭s, IGM=6A)	IDM	290	A
Total Power Dissipation (TC=25掳C)	PTOT(25掳C)	175	W
Total Power Dissipation (TC=100掳C)	PTOT(100掳C)	100	W
Junction Temperature Range	TJ	-55 to +175	掳C
Storage Temperature Range	TSTG	-65 to +150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the thermal resistance.
   • Handle the device with care to avoid mechanical damage.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use short and wide leads to minimize inductance and improve high-frequency performance.

3. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature within the specified range.
   • Use a heatsink with sufficient thermal conductivity and surface area.

4. Gate Drive:

   • Apply a gate voltage within the specified limits to avoid damaging the gate oxide.
   • Use a low-impedance driver to minimize switching losses.

5. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive current.
   • Monitor the drain current and use a current-limiting circuit if necessary.

6. Storage and Handling:

   • Store the device in a dry, cool place away from direct sunlight.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage.

7. Testing:

   • Perform initial testing under controlled conditions to ensure proper operation.
   • Verify all connections and settings before applying power.

8. Compliance:

   • Ensure that the application complies with relevant safety and regulatory standards.

(For reference only)