Details

---

BUY 340N08NS https://www.utsource.net/itm/p/11752058.html

Below is the parameter table and instructions for the 340N08NS, which is a silicon N-channel MOSFET.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Drain-Source Voltage	VDSS	-	-	800	V	-
Gate-Source Voltage	VGSS	-15	-	20	V	-
Continuous Drain Current	ID	-	40	-	A	TC = 25°C
Continuous Drain Current	ID	-	34	-	A	TC = 100°C
Pulse Drain Current	IDpeak	-	170	-	A	tp = 10 μs, IGT = 6 A
Gate Charge	QG	-	140	-	nC	-
Input Capacitance	Ciss	-	2200	-	pF	VDS = 0 V, f = 1 MHz
Output Capacitance	Coss	-	350	-	pF	VDS = 500 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	1100	-	pF	VDS = 500 V, f = 1 MHz
On-State Resistance	RDS(on)	-	0.18	-	Ω	VGS = 10 V, ID = 34 A
Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 250 μA
Total Power Dissipation	PTOT	-	-	450	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C	-
Storage Temperature Range	TSTG	-55	-	150	°C	-

Instructions

1. Handling and Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Handle the device with care to avoid mechanical stress or damage to the leads.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

2. Mounting and Soldering:

   • Ensure that the PCB (Printed Circuit Board) is clean and free from contaminants before soldering.
   • Use a soldering iron with a temperature not exceeding 350°C.
   • The soldering time should not exceed 10 seconds per joint.
   • Allow the device to cool down naturally after soldering to avoid thermal shock.

3. Operating Conditions:

   • Ensure that the operating conditions (voltage, current, and temperature) do not exceed the maximum ratings specified in the parameter table.
   • Use appropriate heat sinks or cooling methods if the device is expected to dissipate significant power.
   • Monitor the junction temperature to ensure it remains within safe limits.

4. Gate Drive:

   • Apply a gate voltage (V_GS) sufficient to fully turn on the MOSFET, typically around 10 V for optimal performance.
   • Ensure that the gate voltage does not exceed the maximum gate-source voltage (V_GSS) to avoid damaging the device.
   • Use a low impedance gate drive circuit to minimize switching losses and improve efficiency.

5. Testing:

   • Before using the device in a final application, test it under controlled conditions to verify its performance and reliability.
   • Use appropriate test equipment and procedures to measure parameters such as on-state resistance, threshold voltage, and gate charge.

By following these instructions, you can ensure the reliable operation and longevity of the 340N08NS MOSFET.

(For reference only)