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BUY NJW21193G/NJW21194G https://www.utsource.net/itm/p/11754862.html

NJW21193G/NJW21194G is a pair of N-channel and P-channel MOSFETs manufactured by ON Semiconductor. They are designed for use in high-speed switching applications. Description: The NJW21193G/NJW21194G is a pair of N-channel and P-channel MOSFETs with low on-resistance, low gate charge, and fast switching speed. The N-channel MOSFET has an RDS(on) of 0.7惟 and the P-channel MOSFET has an RDS(on) of 0.9惟. Both MOSFETs have a maximum drain-source voltage of 100V and a maximum gate-source voltage of 卤20V. Features: Low on-resistance Low gate charge Fast switching speed Maximum drain-source voltage of 100V Maximum gate-source voltage of 卤20V Applications: The NJW21193G/NJW21194G is suitable for use in high-speed switching applications such as DC-DC converters, motor drives, and power supplies. (For reference only)