Details

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BUY 39N60W TK39N60W 600V 38.8A MOS https://www.utsource.net/itm/p/11755735.html

Parameter	Symbol	Value	Unit	Notes
Drain-Source Voltage (Max)	VDSS	600	V	Maximum drain-to-source voltage
Continuous Drain Current (Max) at TC = 25°C	ID	38.8	A	Maximum continuous drain current
Gate-Source Voltage (Max)	VGS	±20	V	Maximum gate-to-source voltage
Power Dissipation (Max)	PD	175	W	Maximum power dissipation
Total Device Dissipation	PTOT	175	W	Maximum total device dissipation
Junction Temperature (Max)	TJ	175	°C	Maximum junction temperature
Storage Temperature	TSTG	-55 to 150	°C	Operating temperature range

Instructions for Use:

1. Mounting and Handling:

   • Ensure the MOSFET is mounted on a suitable heatsink to manage heat dissipation effectively.
   • Handle the device with care to avoid damage to the leads or body.

2. Electrical Connections:

   • Connect the drain, source, and gate terminals as per your circuit design.
   • Ensure all connections are secure and insulated to prevent short circuits.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Keep the junction temperature within the specified limits to ensure reliable operation.

4. Gate Drive:

   • Apply gate voltages within the specified range to avoid damaging the gate oxide.
   • Use appropriate gate drive circuits to provide sufficient drive current for fast switching.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Protect from electrostatic discharge (ESD) by using proper packaging and handling techniques.

6. Testing:

   • Perform initial testing under controlled conditions to validate performance.
   • Regularly inspect the device for signs of wear or damage during operation.

(For reference only)