Details

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Parameter	Value	Unit
Device	IRLR8726PBF
Type	MOSFET
Package	SO-8
VDS (Drain-Source Voltage)	30	V
RDS(on) @ VGS=10V	1.4	mΩ
ID (Continuous Drain Current)	59	A
PD (Power Dissipation)	1.75	W
TJ (Operating Junction Temperature)	-55 to 175	°C
VGSS (Gate-Source Voltage)	±20	V
Qg (Total Gate Charge)	45	nC
Input Capacitance	1850	pF
Output Capacitance	390	pF

Instructions:

1. Storage Conditions: Store in a dry, cool place away from direct sunlight and sources of heat.
2. Handling: Use appropriate ESD (Electrostatic Discharge) precautions when handling the device to prevent damage.
3. Soldering: Ensure that soldering temperature does not exceed the maximum junction temperature specified.
4. Mounting: Follow recommended PCB layout guidelines for optimal thermal performance.
5. Testing: Before use, verify all electrical parameters using calibrated test equipment.
6. Application: Suitable for applications requiring low on-resistance and high current capability, such as power supplies, motor control, and battery management systems.

(For reference only)