Details

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BUY AT27C4096-55PU https://www.utsource.net/itm/p/11761264.html

Parameter	Description	Value
Device Type	Non-Volatile Memory	4M x 8-bit Flash EEPROM
Package Type	Plastic Dual In-Line Package (PDIP)	40-Pin
Operating Voltage (Vcc)	Supply Voltage Range	4.5V to 5.5V
Programming Voltage (Vpp)	Programming Supply Voltage	12.0V ± 0.5V
Access Time (tAC)	Access Time	55ns (max)
Data Retention	Data Retention Time	10 years (min)
Endurance	Write/Erase Cycles	100,000 cycles (min)
Operating Temperature Range (Toperating)	Operating Temperature	-40°C to +85°C
Storage Temperature Range (Tstorage)	Storage Temperature	-65°C to +150°C
Standby Current (ISB)	Standby Current	50μA (max) at Vcc = 5.0V, TA = 25°C
Active Current (ICC)	Active Current	30mA (max) at Vcc = 5.0V, fCLK = 10MHz, TA = 25°C
Write Time (tPROG)	Write Time per Byte	2ms (max)
Block Erase Time (tBE)	Block Erase Time	1s (max)
Chip Erase Time (tCE)	Chip Erase Time	5s (max)

Instructions for Use:

1. Power Supply:

   • Connect Vcc to the positive power supply (4.5V to 5.5V).
   • Connect Vss to ground (0V).

2. Programming:

   • Apply Vpp (12.0V ± 0.5V) to the Vpp pin during programming.
   • Ensure the programming voltage is stable and within the specified range.

3. Addressing:

   • Use the address lines (A0-A19) to select the desired memory location.
   • The device supports 20 address lines, allowing access to 1,048,576 bytes (1MB).

4. Data Input/Output:

   • Data is read from or written to the device using the data lines (D0-D7).
   • Ensure that the data lines are properly connected to the microcontroller or other data source.

5. Control Signals:

   • /OE (Output Enable): Low to enable data output.
   • /WE (Write Enable): Low to initiate a write operation.
   • /CE (Chip Enable): Low to select the chip.
   • /PP (Program Protect): High to allow programming, low to protect against accidental writes.

6. Write Operation:

   • Set /CE and /WE low to initiate a write cycle.
   • Apply the desired data to the data lines and the address to the address lines.
   • Maintain the programming voltage (Vpp) during the write cycle.
   • Wait for the write time (tPROG) to complete before changing the address or data lines.

7. Erase Operation:

   • For block erase, set the address lines to the start of the block and apply the appropriate control signals.
   • For chip erase, set all address lines to high and apply the appropriate control signals.
   • Maintain the programming voltage (Vpp) during the erase cycle.
   • Wait for the erase time (tBE or tCE) to complete before performing any read or write operations.

8. Standby Mode:

   • To reduce power consumption, set /CE high to put the device into standby mode.
   • The standby current (ISB) is typically very low, making it suitable for battery-powered applications.

9. Handling Precautions:

   • Handle the device with care to avoid static damage.
   • Ensure proper grounding and use ESD protection when handling the device.
   • Follow the recommended operating conditions to ensure reliable performance.

10. Storage:

    • Store the device in a dry, cool environment within the specified storage temperature range.
    • Avoid exposure to extreme temperatures and humidity to prevent damage.

By following these instructions, you can ensure the proper operation and longevity of the AT27C4096-55PU Flash EEPROM.

(For reference only)