IXFK94N50P2 IXYS TO264 94A/500V MOS

IXFK94N50P2 IXYS TO264 94A/500V MOS

Category: Transistors

Specifications
SKU
11772482
Details

BUY IXFK94N50P2 IXYS TO264 94A/500V MOS https://www.utsource.net/itm/p/11772482.html

Parameter Symbol Min Typical Max Unit Notes
Drain-Source Voltage VDSS - 500 - V
Gate-Source Voltage VGSS -15 - 15 V
Continuous Drain Current ID - 94 - A @ TC = 25掳C
Pulse Drain Current ID(p) - 188 - A @ TC = 25掳C, tp = 10 渭s, IGS = 10 A
Power Dissipation PTOT - 300 - W @ TC = 25掳C
Junction Temperature TJ - - 175 掳C
Storage Temperature TSTG -55 - 150 掳C
Thermal Resistance, Junction to Case R胃JC - 0.38 - 掳C/W
Input Capacitance Ciss - 1500 - pF @ VDS = 400 V, f = 1 MHz
Output Capacitance Coss - 250 - pF @ VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 150 - pF @ VDS = 400 V, f = 1 MHz
Gate Charge Qg - 110 - nC @ VGS = 15 V, ID = 94 A
Turn-On Delay Time td(on) - 20 - ns @ VGS = 15 V, ID = 94 A
Rise Time tr - 25 - ns @ VGS = 15 V, ID = 94 A
Turn-Off Delay Time td(off) - 25 - ns @ VGS = 15 V, ID = 94 A
Fall Time tf - 30 - ns @ VGS = 15 V, ID = 94 A

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is handled with care to avoid mechanical stress.
    • Mount the device on a heatsink to manage thermal resistance effectively.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use short and wide leads to minimize inductance and improve performance.
  3. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature within the specified limits.
    • Use thermal grease or a thermal pad between the device and the heatsink for better heat transfer.
  4. Gate Drive:

    • Apply the correct gate-source voltage (VGS) to ensure proper turn-on and turn-off.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  5. Overvoltage Protection:

    • Implement overvoltage protection circuits to prevent damage from voltage spikes.
    • Consider using snubber circuits to dampen voltage transients.
  6. Storage and Operating Conditions:

    • Store the device in a dry and cool environment to prevent moisture damage.
    • Operate the device within the specified temperature range to ensure reliable performance.
  7. Testing:

    • Perform initial testing at low power levels to verify correct operation.
    • Gradually increase the load to the rated values while monitoring temperature and performance.

By following these guidelines, you can ensure optimal performance and reliability of the IXFK94N50P2 MOSFET.

(For reference only)

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