Details

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BUY K3878 2SK3878 TOSHIBA TO-3P https://www.utsource.net/itm/p/11772560.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0	-	-	450	V
Emitter-Collector Voltage	VECS	IB = 0	-	-	450	V
Collector-Base Voltage	VCBO	IE = 0	-	-	450	V
Base-Emitter Voltage	VBE	IC = 100 mA, Tc = 25掳C	-	-	3.0	V
Continuous Collector Current	IC	Tc = 25掳C	-	-	15	A
Continuous Collector Dissipation	PC	Tc = 25掳C	-	-	120	W
Junction Temperature	TJ	-	-	-	150	掳C
Storage Temperature Range	TSTG	-	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure the device is mounted on a heatsink to dissipate heat effectively.
   • Use thermal grease between the device and the heatsink to improve thermal conductivity.

2. Electrical Connections:

   • Connect the collector (C) to the high-voltage side of the circuit.
   • Connect the emitter (E) to the low-voltage side of the circuit.
   • Connect the base (B) to the control signal source.

3. Biasing:

   • Apply a suitable base current (I_B) to ensure the transistor operates in the desired region (cut-off, active, or saturation).

4. Overvoltage Protection:

   • Use appropriate overvoltage protection circuits to prevent damage from transient voltage spikes.

5. Dissipation Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
   • Use forced air cooling or a larger heatsink if necessary to maintain safe operating temperatures.

6. Storage:

   • Store the device in a dry, cool place within the temperature range of -55掳C to 150掳C.

7. Handling:

   • Handle the device with care to avoid mechanical damage.
   • Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.

8. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters before integrating it into the final application.

For more detailed information, refer to the datasheet provided by TOSHIBA.

(For reference only)