IPA70R360P7S,70S360P7

IPA70R360P7S,70S360P7

Category: Transistors

Specifications
SKU
11772578
Details

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Parameter Symbol Test Conditions Min Typical Max Unit
Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 25A - 360 - m惟
Gate Charge QG VGS = 15V, IG = 1A - 70 - nC
Input Capacitance Ciss VDS = 15V, f = 1MHz - 1900 - pF
Output Capacitance Coss VDS = 15V, f = 1MHz - 450 - pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1MHz - 550 - pF
Continuous Drain Current ID TC = 25掳C - 70 - A
Continuous Drain Current ID TC = 100掳C - 50 - A
Pulse Drain Current ID(p) tp = 10ms, TC = 25掳C - 140 - A
Maximum Drain-Source Voltage VDS(max) - - 700 - V
Maximum Gate-Source Voltage VGS(max) - - 卤20 - V
Junction Temperature TJ - - - 175 掳C
Storage Temperature Range TSTG - -65 - 150 掳C

Instructions:

  1. Handling Precautions:

    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
    • Avoid exceeding the maximum ratings to prevent damage to the device.
  2. Mounting and Soldering:

    • Ensure the mounting surface is clean and flat.
    • Use a soldering iron with a temperature not exceeding 300掳C.
    • Avoid excessive heat and mechanical stress during soldering.
  3. Operating Conditions:

    • Operate within the specified temperature range to ensure reliable performance.
    • Monitor the junction temperature to avoid overheating.
  4. Testing:

    • Use the specified test conditions for accurate measurements.
    • Refer to the datasheet for detailed testing procedures and additional parameters.
  5. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep away from direct sunlight and extreme temperatures.
(For reference only)

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