Details
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Parameter | Symbol | Value | Unit |
---|---|---|---|
Maximum Drain-to-Source Voltage | VDS | 600 | V |
Continuous Drain Current (Tc = 25掳C) | ID | 34 | A |
Continuous Drain Current (Tc = 100掳C) | ID | 24 | A |
Pulse Drain Current (Tc = 25掳C, 10 渭s) | IDpeak | 120 | A |
Gate-to-Source Voltage | VGS | 卤20 | V |
On-State Resistance at 25掳C | RDS(on) | 60 | m惟 |
On-State Resistance at 100掳C | RDS(on) | 84 | m惟 |
Total Gate Charge | QG | 92 | nC |
Input Capacitance | Ciss | 1920 | pF |
Output Capacitance | Coss | 460 | pF |
Reverse Transfer Capacitance | Crss | 250 | pF |
Junction Temperature Range | TJ | -55 to 150 | 掳C |
Instructions for Use:
Power Supply and Circuit Design:
- Ensure that the maximum drain-to-source voltage (VDS) does not exceed 600V.
- The continuous drain current (ID) should be within the specified limits based on the case temperature (Tc).
Thermal Management:
- Use appropriate heat sinks or cooling solutions to maintain the junction temperature (TJ) within the range of -55掳C to 150掳C.
- For high current applications, ensure adequate thermal dissipation to prevent overheating.
Gate Drive:
- Apply gate-to-source voltages (VGS) within the range of 卤20V to avoid damage to the device.
- Ensure the gate drive circuitry can handle the total gate charge (QG) to minimize switching losses.
Capacitance Considerations:
- Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in your circuit design to optimize performance and minimize parasitic effects.
Storage and Handling:
- Store the device in a dry, cool place to prevent moisture damage.
- Handle with care to avoid static discharge, which can damage the sensitive MOSFET structure.
Testing and Troubleshooting:
- Regularly test the device parameters to ensure they remain within the specified limits.
- If any parameter deviates significantly, check for potential issues such as overheating, incorrect gate drive, or physical damage.
Compliance and Standards:
- Ensure that the device is used in compliance with relevant safety and regulatory standards for your application.
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