Details

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BUY FQA65N20 65N20 65A200V TO-3P MOS https://www.utsource.net/itm/p/11773285.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	200	V
Gate-Source Voltage	VGS	-15	-	15	V
Continuous Drain Current	ID	-	-	65	A	Tc = 25°C
Pulse Drain Current	IDM	-	-	300	A	t = 10μs, Duty cycle = 1%
Gate Charge	Qg	-	48	-	nC	VGS = 10V
Input Capacitance	Ciss	-	2750	-	pF	VDS = 20V, f = 1MHz
Output Capacitance	Coss	-	490	-	pF	VDS = 20V, f = 1MHz
RDS(on)	RDS(on)	-	0.043	-	Ω	VGS = 10V, ID = 25A
Threshold Voltage	Vth	2	4	6	V	ID = 1mA

Instructions for Use:

1. Handling Precautions:

   • The FQA65N20 MOSFET is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.

2. Mounting:

   • Ensure proper heat dissipation by mounting the device on a suitable heatsink. The TO-3P package requires a good thermal interface material between the device and the heatsink.

3. Operating Conditions:

   • Operate within the specified voltage and current limits to avoid damage or reduced performance.
   • For continuous operation, ensure that the junction temperature does not exceed the maximum allowable limit.

4. Gate Drive:

   • Apply gate drive voltages within the specified range to prevent gate oxide damage and ensure reliable switching performance.
   • Use a low impedance driver to minimize switching losses and ringing.

5. Storage:

   • Store in a dry environment to prevent moisture absorption which can lead to corrosion or damage during soldering.

6. Soldering:

   • Follow recommended soldering profiles to prevent thermal stress that could damage the device.

7. Testing:

   • Perform initial testing under controlled conditions to verify correct operation before deploying in final applications.

(For reference only)