HY3008P ENCAPSULATIONTO-220 80V100A REPLACEABLE IRFB3507PBF
Category: Transistors
Specifications
SKU
11776774
Details
BUY HY3008P ENCAPSULATIONTO-220 80V100A REPLACEABLE IRFB3507PBF https://www.utsource.net/itm/p/11776774.html
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Parameter | Value | Unit |
---|---|---|
Encapsulation | TO-220 | - |
Voltage Rating (Vds) | 80 | V |
Current Rating (Id) | 100 | A |
Power Dissipation (Pd) | 150 | W |
Rds(on) | 4.5 | m惟 |
Gate Charge (Qg) | 110 | nC |
Junction Temperature | -55 to +175 | 掳C |
Storage Temperature | -65 to +150 | 掳C |
Package Type | Replaceable | - |
Instructions for Use:
Handling:
- Handle with care to avoid damage to the device.
- Avoid exposure to static electricity.
Mounting:
- Ensure proper heat sinking to manage thermal dissipation.
- Use appropriate mounting hardware and thermal compound to enhance heat transfer.
Electrical Connections:
- Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
- Ensure all connections are secure and free from shorts or open circuits.
Operational Parameters:
- Do not exceed the maximum voltage (Vds) of 80V.
- Do not exceed the maximum current (Id) of 100A.
- Monitor the junction temperature to ensure it remains within the specified range (-55掳C to +175掳C).
Storage:
- Store in a dry, cool place within the temperature range of -65掳C to +150掳C.
- Protect from moisture and corrosive environments.
Testing:
- Perform initial testing at lower power levels to ensure proper operation.
- Regularly inspect for signs of wear or damage.
Replacement:
- If the device fails or shows signs of degradation, replace with a compatible model.
- Follow the same mounting and connection procedures as the original device.
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