Details

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BUY FGB20N60 https://www.utsource.net/itm/p/11838551.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-State Resistance	RDS(on)	-	0.24	-	Ω	At VGS = 10V, ID = 5A
Breakdown Voltage	V(BR)DSS	600	-	-	V	Drain to Source
Gate Threshold Voltage	VGS(th)	2.0	-	4.0	V	Gate to Source
Continuous Drain Current	ID	-	20	-	A	At Tc = 25°C
Power Dissipation	PD	-	360	-	W	At TC = 25°C
Total Gate Charge	QG	-	78	-	nC	At VGS = 10V

Instructions for FGB20N60:

1. Handling Precautions: The FGB20N60 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure the device is mounted on a suitable heatsink if operating at high currents or in high ambient temperatures to maintain junction temperature within safe limits.
3. Gate Drive: Apply gate drive voltage between 10V to 20V for optimal performance. Ensure the gate drive circuitry can supply sufficient current to charge and discharge the gate capacitance quickly.
4. Storage Conditions: Store in a dry, cool place away from direct sunlight and corrosive materials.
5. Operating Temperature: Operate within the specified temperature range to avoid damage or reduced performance. Check the datasheet for exact temperature ranges.
6. PCB Layout: Design PCB layout to minimize parasitic inductances, especially for high-frequency switching applications.
7. Safety Margin: Design circuits considering a safety margin for parameters like drain-source voltage and current to ensure reliable operation under all conditions.

(For reference only)