BSM25GB120DN1

BSM25GB120DN1


Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Blocking Voltage V(BR)DSS - 1200 - V Drain-source breakdown voltage
Continuous Drain Current ID - - 25 A At Tc = 25°C
Pulse Drain Current Ipp - - 100 A Pulse duration ≤ 10 μs
Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 V Gate threshold voltage
On-State Resistance RDS(on) - 70 - At VGS = 10V, ID = 10A
Total Gate Charge Qg - 80 - nC Gate charge at VGS = 15V
Input Capacitance Ciss - 1600 - pF Input capacitance
Output Capacitance Coss - 390 - pF Output capacitance
Reverse Transfer Capacitance Crss - 100 - pF Reverse transfer capacitance
Junction Temperature Tj -55 - 150 °C Operating junction temperature range

Instructions for BSM25GB120DN1:

  1. Mounting and Handling:

    • Ensure proper ESD (Electrostatic Discharge) protection during handling.
    • Follow recommended soldering profiles to avoid thermal damage.
  2. Operating Conditions:

    • Do not exceed the maximum ratings listed in the parameter table.
    • Keep the junction temperature within the specified range (-55°C to 150°C).
  3. Biasing and Drive:

    • Apply gate voltage within the specified limits to ensure reliable operation.
    • Use appropriate gate resistors to control switching speed and reduce electromagnetic interference (EMI).
  4. Thermal Management:

    • Ensure adequate heat sinking or cooling to manage power dissipation.
    • Monitor the device temperature especially under high load conditions.
  5. Storage and Packaging:

    • Store in a dry environment to prevent moisture absorption.
    • Follow the manufacturer’s guidelines for storage and packaging to maintain component integrity.
  6. Testing:

    • Verify all electrical parameters before integrating into the final application.
    • Conduct thorough testing under actual operating conditions to ensure reliability.
  7. Application Specific Considerations:

    • For high-frequency applications, consider parasitic elements like stray inductance and capacitance.
    • In motor drive applications, ensure robustness against transient voltages and currents.
(For reference only)

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