KTB2510,B2510

KTB2510,B2510

Category: Transistors

Specifications
Details

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Parameter KTB2510 B2510
Type Thyristor Bipolar Transistor
Collector-Emitter Voltage (Vceo) - 80V
Collector Current (Ic) - 1.5A
Power Dissipation (Ptot) - 625mW
Base-Emitter Voltage (Vbe(on)) - 1.2V
Storage Temperature (Tstg) -25°C to +85°C -55°C to +150°C
Operating Temperature (Tj) -25°C to +85°C -55°C to +150°C
Package Type TO-92 SOT-23

Instructions for Use:

KTB2510:

  • Mounting: Ensure the device is mounted in a way that it can dissipate heat effectively, especially if operating near its maximum temperature range.
  • Handling: Handle with care to avoid damage to the leads and body. Use appropriate anti-static measures.
  • Testing: Test the device in a controlled environment to ensure it operates within specified parameters.

B2510:

  • Mounting: Mount the device on a suitable PCB with adequate clearance to prevent short circuits. Ensure good thermal management if used in high-power applications.
  • Handling: Follow standard ESD precautions when handling the component.
  • Testing: Verify all connections are secure and test functionality using a signal generator and oscilloscope if possible.

Note: Specific application details and additional parameters may be found in the respective datasheets for each component.

(For reference only)

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