Details

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BUY FE100A9 https://www.utsource.net/itm/p/11896412.html

Parameter	Description	Value	Unit
Part Number	Full part identification	FE100A9	-
Type	Device type	FET	-
Configuration	Channel configuration	Enhancement	-
VGS(th)	Gate-source threshold voltage	卤2.0	V
IDSS	Zero gate voltage drain current	0.1	mA
RDS(on)	On-state resistance at VGS = 10V	0.8	惟
VDS(max)	Maximum drain-to-source voltage	50	V
VGS(max)	Maximum gate-to-source voltage	卤20	V
PD(max)	Maximum power dissipation	0.4	W
TJ	Junction temperature range	-55 to 150	掳C

Instructions for Use:

1. Handling Precautions: Handle the FE100A9 with care to avoid static damage. Use proper ESD protection.
2. Mounting: Ensure that the device is mounted in a way that allows adequate heat dissipation, especially when operating near maximum power dissipation.
3. Biasing: Apply gate voltages within the specified VGS(max) limits to prevent damage to the gate oxide.
4. Operating Conditions: Operate the device within the specified temperature range (TJ). Exceeding these limits can lead to device failure.
5. Storage: Store in a dry environment and follow anti-static storage procedures to protect against moisture and static damage.
6. Testing: When testing the device, ensure that all test conditions adhere to the specified parameters to obtain accurate results.

(For reference only)