Details

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BUY IRFB7434 https://www.utsource.net/itm/p/12357472.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Drain-Source On-Resistance	RDS(on)	-	12	-	mΩ	VGS = 10V, ID = 25A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250μA
Continuous Drain Current	ID	-	-	39	A	TC = 25°C
Pulse Drain Current	ID pul	-	-	85	A	TP = 10ms, TC = 25°C
Power Dissipation	PD	-	-	160	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C	-
Storage Temperature Range	TSTG	-55	-	150	°C	-

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum current or power dissipation limits.
2. Gate Drive: Apply gate-source voltage (VGS) within the specified threshold range to ensure proper switching.
3. Thermal Management: Monitor junction temperature; do not exceed the maximum specified limit of 150°C.
4. Pulse Operation: When using the device in pulse applications, ensure the pulse duration and frequency are within the rated pulse drain current specifications.
5. Storage Conditions: Store the device within the temperature range of -55°C to 150°C to avoid damage.
6. Electrostatic Sensitivity: Handle with care as the device is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.

(For reference only)