Details

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BUY 1B22AN https://www.utsource.net/itm/p/12358183.html

Parameter	Description
Part Number	1B22AN
Type	Bipolar Transistor
Polarity	NPN
Collector-Emitter Voltage (VCEO)	60 V
Emitter-Base Voltage (VEBO)	5 V
Collector Current (IC)	1 A
Power Dissipation (PD)	15 W
DC Current Gain (hFE)	100 - 300 (at IC = 150 mA, VCE = 10 V)
Transition Frequency (fT)	10 MHz
Storage Temperature Range	-55°C to +150°C
Operating Temperature Range	-55°C to +150°C
Package Type	TO-220AB

Instructions for Use

1. Mounting:

   • Ensure proper heat sinking if operating at high power levels.
   • Use a thermal compound between the transistor and the heatsink for better thermal conductivity.

2. Biasing:

   • Apply a base current (IB) that is sufficient to ensure the transistor operates in the active region or saturation as required.
   • Use a base resistor to limit the base current and protect the transistor from overcurrent.

3. Handling:

   • Handle with care to avoid damage to the leads and the body of the transistor.
   • Avoid exposure to static electricity, which can damage the device.

4. Testing:

   • Use a multimeter to check the continuity and resistance between the terminals.
   • Ensure the transistor is not connected to any live circuits during testing to prevent damage.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the transistors in anti-static packaging to protect them from ESD (Electrostatic Discharge).

6. Soldering:

   • Use a temperature-controlled soldering iron to avoid overheating the transistor.
   • Solder quickly and avoid prolonged heating of the leads.

7. Circuit Design:

   • Ensure the circuit design accounts for the maximum ratings of the transistor to avoid damage.
   • Use appropriate protection circuits such as clamping diodes to protect against voltage spikes.

(For reference only)