Details

---

BUY M25P16-VMN6P https://www.utsource.net/itm/p/12368914.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	Vcc		2.7		3.6	V
Standby Current	Icc	Vcc = 2.7V to 3.6V	1		5	μA
Active Current	Icc	Vcc = 2.7V to 3.6V, Read	2	4	8	mA
Page Program Time	Tpp	Page Size = 256 bytes		2	5	ms
Sector Erase Time	Tse	64K Sector		200	300	ms
Chip Erase Time	Tce	Full Chip		30	60	s
Data Retention				20	100	years
Operating Temperature	Topr	Vcc = 2.7V to 3.6V	-40		85	°C
Storage Temperature	Tstg		-65		150	°C

Instructions for M25P16-VMN6P

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.

2. Standby and Active Current:

   • The standby current should not exceed 5 μA.
   • The active current during read operations should be between 2 mA and 8 mA.

3. Programming and Erasing:

   • Page programming time for a 256-byte page should be between 2 ms and 5 ms.
   • Sector erase time for a 64K sector should be between 200 ms and 300 ms.
   • Chip erase time for the full chip should be between 30 seconds and 60 seconds.

4. Data Retention:

   • The data retention period is between 20 years and 100 years under normal operating conditions.

5. Temperature Ranges:

   • Operating temperature should be between -40°C and 85°C.
   • Storage temperature should be between -65°C and 150°C.

6. Initialization:

   • Before using the device, ensure it is properly initialized by setting the appropriate configuration registers.

7. Command Execution:

   • Use the correct command set for read, write, and erase operations as specified in the datasheet.

8. Error Handling:

   • Monitor status registers to detect and handle errors such as write protect or erase failures.

9. Pin Configuration:

   • Connect the pins according to the pinout diagram provided in the datasheet to ensure proper functionality.

10. Handling Precautions:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow the recommended soldering and mounting procedures to prevent thermal stress.

(For reference only)