Details

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BUY AT28HC256-70SC https://www.utsource.net/itm/p/12374857.html

Parameter	Description	Value
Device Type	Non-volatile Flash Memory	AT28HC256-70SC
Organization	Organization	32K x 8 bits
Supply Voltage (VCC)	Operating Supply Voltage	2.7V to 5.5V
Access Time (tAC)	Access Time	70ns
Package Type	Package Style	SOIC-28
Operating Temperature	Temperature Range for Operation	-40°C to +85°C
Write Cycle Time	Time required for a write cycle	3ms
Endurance	Write/Erase Cycles	1,000,000 cycles
Data Retention	Data retention period	10 years
Input/Output Voltage	I/O Voltage Levels	VIL = 0.8V, VIH = 2.0V
Standby Current	Current Consumption in Standby Mode	1μA max
Active Current	Current Consumption in Active Mode	30mA max

Instructions:

1. Powering the Device: Ensure that the supply voltage (VCC) is within the specified range of 2.7V to 5.5V.
2. Addressing and Data Lines: Connect the address lines (A0-A14) to select the memory location and data lines (D0-D7) for data transfer.
3. Control Signals: Use control signals such as Chip Select (CS), Output Enable (OE), and Write Enable (WE) to manage read/write operations.
4. Write Operations: A write cycle takes approximately 3 milliseconds. Ensure no new operation starts until the current write cycle completes.
5. Read Operations: Access time for reading data is 70 nanoseconds. Ensure the timing constraints are met for reliable data retrieval.
6. Temperature Considerations: Operate the device within the temperature range of -40°C to +85°C to avoid damage or unreliable performance.
7. Handling Precautions: Handle the device with care to prevent electrostatic discharge (ESD) damage, especially when interfacing with other components.
8. Endurance and Retention: The device supports up to 1,000,000 write/erase cycles and retains data for up to 10 years under normal operating conditions.

(For reference only)