Details

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BUY STW35N65M5 https://www.utsource.net/itm/p/12376118.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-650	-	-	V	Maximum drain-to-source voltage (reverse)
Gate-Source Voltage	VGS	-15	-	20	V	Maximum gate-to-source voltage
Continuous Drain Current	ID	-	35	-	A	Continuous drain current at TC = 25掳C
Pulse Drain Current	ID(pulse)	-	110	-	A	Non-repetitive peak pulse drain current (10 渭s, 1% duty cycle)
Power Dissipation	PTOT	-	-	170	W	Total power dissipation (TC = 25掳C)
Junction Temperature	TJ	-55	-	150	掳C	Operating junction temperature range
Storage Temperature	TSTG	-55	-	150	掳C	Storage temperature range
Gate Charge	QG	-	94	-	nC	Total gate charge at VDS = 400V, VGS = 15V
Input Capacitance	Ciss	-	3400	-	pF	Input capacitance at VDS = 400V, f = 1 MHz
Output Capacitance	Coss	-	800	-	pF	Output capacitance at VDS = 400V, VGS = 0V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	1000	-	pF	Reverse transfer capacitance at VDS = 400V, VGS = 0V, f = 1 MHz
On-State Resistance	RDS(on)	-	0.175	-	惟	On-state resistance at VGS = 10V, ID = 35A, TJ = 25掳C
Threshold Voltage	VGS(th)	2.5	3.5	4.5	V	Gate threshold voltage
Turn-On Delay Time	td(on)	-	65	-	ns	Turn-on delay time at VDS = 400V, ID = 35A, VGS = 15V
Rise Time	tr	-	35	-	ns	Rise time at VDS = 400V, ID = 35A, VGS = 15V
Turn-Off Delay Time	td(off)	-	65	-	ns	Turn-off delay time at VDS = 400V, ID = 35A, VGS = 0V
Fall Time	tf	-	35	-	ns	Fall time at VDS = 400V, ID = 35A, VGS = 0V

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Handle the device with care to avoid mechanical stress or damage to the leads.

2. Mounting:

   • Ensure proper thermal management by using a heat sink if necessary.
   • Apply thermal paste between the device and the heat sink for better thermal conductivity.
   • Secure the device to the PCB using recommended soldering techniques to ensure a reliable connection.

3. Electrical Connections:

   • Connect the gate and source pins carefully to avoid short circuits.
   • Use appropriate gate drive circuits to ensure the device operates within its safe operating area (SOA).
   • Ensure that the gate voltage is within the specified range to prevent damage to the gate oxide.

4. Operating Conditions:

   • Monitor the junction temperature to ensure it does not exceed the maximum rating.
   • Keep the drain-source voltage within the specified limits to avoid breakdown.
   • Operate the device within the recommended current and power dissipation limits.

5. Testing:

   • Use a suitable test setup to verify the performance parameters of the device.
   • Test the device under conditions similar to those expected in the final application.

6. Safety Precautions:

   • Always use appropriate safety equipment when handling high-voltage circuits.
   • Follow all relevant safety guidelines and regulations to prevent electrical hazards.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)