Details

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BUY IRF650B https://www.utsource.net/itm/p/12377466.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	200	V	Continuous
Gate-Source Voltage	VGS	-15	-	15	V	Continuous
Continuous Drain Current	ID	-	9.2	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	34	-	A	tp = 8 渭s, IG = 10 A, TC = 25掳C
Power Dissipation	PD	-	-	100	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	Tstg	-55	-	150	掳C	-
Thermal Resistance	R胃JC	-	-	1.5	掳C/W	Junction to Case
Input Capacitance	Ciss	-	1450	-	pF	VDS = 25 V, f = 1 MHz
Output Capacitance	Coss	-	240	-	pF	VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	150	-	pF	VDS = 25 V, f = 1 MHz
Gate Charge	QG	-	50	-	nC	VGS = 10 V
Turn-On Delay Time	td(on)	-	130	-	ns	VGS = 10 V, ID = 9.2 A, RG = 3 惟
Rise Time	tr	-	50	-	ns	VGS = 10 V, ID = 9.2 A, RG = 3 惟
Turn-Off Delay Time	td(off)	-	100	-	ns	VGS = -5 V, ID = 9.2 A, RG = 3 惟
Fall Time	tf	-	45	-	ns	VGS = -5 V, ID = 9.2 A, RG = 3 惟

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Handle the device with care to avoid mechanical damage or static discharge.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within safe limits.
   • Use thermal compound between the device and the heat sink for better thermal conductivity.

3. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Use a gate resistor (R_G) to control the switching speed and reduce ringing.

4. Operation:

   • Ensure the drain-source voltage (V_DS) does not exceed 200 V to prevent breakdown.
   • Do not exceed the continuous drain current (I_D) of 9.2 A at T_C = 25掳C.
   • For pulse operation, ensure the pulse duration (t_p) is within the specified limit to avoid overheating.

5. Testing:

   • Use appropriate test equipment to measure parameters such as input capacitance, output capacitance, and gate charge.
   • Follow the conditions specified for each parameter during testing to obtain accurate results.

6. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Ensure proper grounding and isolation to prevent electrical hazards.

By adhering to these instructions, you can ensure reliable and efficient operation of the IRF650B MOSFET.

(For reference only)