Details

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BUY IRF1407PBF https://www.utsource.net/itm/p/12377471.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	-	-	55	V
Gate-Source Voltage	VGS	-10	-	20	V
Continuous Drain Current	ID	-	38	-	A
Pulse Drain Current	IDpeak	-	114	-	A
Power Dissipation	PTOT	-	-	205	W
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance	R胃JC	-	-	0.45	掳C/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the leads and body.

2. Electrical Connections:

   • Connect the drain (D) to the high-voltage side of the circuit.
   • Connect the source (S) to the low-voltage side or ground.
   • Apply gate (G) voltage carefully to control the switching action. Avoid exceeding the maximum gate-source voltage (V_GS).

3. Operating Conditions:

   • Do not exceed the maximum drain-source voltage (V_DS) of 55V.
   • Continuous drain current (I_D) should not exceed 38A.
   • For pulse applications, ensure that the peak drain current (I_Dpeak) does not exceed 114A.
   • Keep the power dissipation (P_TOT) below 205W to prevent overheating.
   • Maintain the junction temperature (T_J) below 175掳C to ensure reliable operation.

4. Storage:

   • Store the device in a dry, cool environment within the storage temperature range (-55掳C to 150掳C).

5. Testing and Troubleshooting:

   • Use appropriate test equipment to verify the device parameters.
   • If the device fails to operate correctly, check for overvoltage, overcurrent, or overheating conditions.

6. Safety Precautions:

   • Always use protective equipment when handling high-voltage circuits.
   • Follow all relevant safety guidelines and regulations.

By adhering to these instructions, you can ensure optimal performance and longevity of the IRF1407PBF MOSFET.

(For reference only)