Details

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BUY FQA70N10 https://www.utsource.net/itm/p/12379377.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-source on-resistance	RDS(on)	VGS = 10V, ID = 7A	-	7.0	-	mΩ
Gate-source threshold voltage	VGS(th)	ID = 250μA	1.0	1.5	2.5	V
Continuous drain current	ID	TC = 25°C	-	-	7.0	A
Power dissipation	PD	TC = 25°C	-	-	64	W
Junction temperature	TJ	-	-	-	150	°C
Storage temperature range	TSTG	-	-55	-	150	°C

Instructions for FQA70N10

1. Handling and Storage:

   • Store the device in a dry, cool place to prevent damage.
   • Handle with care to avoid static damage; use appropriate ESD protection.

2. Installation:

   • Ensure that the device is correctly oriented during installation to match the circuit layout.
   • Use a heatsink if operating near maximum power dissipation to maintain optimal temperature.

3. Operation:

   • Do not exceed the maximum ratings specified in the table to prevent damage or malfunction.
   • Operate within the recommended operating conditions for reliable performance.

4. Testing:

   • When testing the device, ensure that the gate-source voltage (VGS) does not exceed the maximum threshold to avoid damaging the gate oxide layer.
   • Verify the drain-source on-resistance (RDS(on)) at the specified conditions to confirm proper functionality.

5. Safety:

   • Always adhere to safety guidelines when working with electrical components.
   • Disconnect power sources before handling the device to avoid electrical shock.

(For reference only)