Details
BUY SKIIP23NAB12T4V1 https://www.utsource.net/itm/p/12380264.html
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Continuous Drain Current | ID | - | 1200 | - | A | At Tc = 25°C, VGS = 15V |
Pulsed Drain Current | IGM | - | 2400 | - | A | t = 10 μs, I2t = 6.72 A2s, VGS = 15V |
Drain-Source Breakdown Voltage | BVDSS | 1600 | - | 1800 | V | VGS = 0V, ID = 250 μA |
Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | ID = 250 mA, Tc = 25°C |
On-State Resistance | RDS(on) | - | 0.018 | - | Ω | VGS = 15V, ID = 1200A, Tc = 25°C |
Total Switching Energy | Esw | - | 140 | - | mJ | VDS = 800V, ID = 1200A, f = 1 kHz, VGS = ±15V |
Input Capacitance | Ciss | - | 13400 | - | pF | VDS = 400V, f = 1 MHz |
Output Capacitance | Coss | - | 1150 | - | pF | VDS = 400V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 1250 | - | pF | VDS = 400V, f = 1 MHz |
Junction Temperature | TJ | -55 | - | 175 | °C | Operating range |
Storage Temperature | TSTG | -55 | - | 150 | °C | Operating range |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Handle the device with care to avoid damage to the leads and the die.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly to the circuit.
- Use short and wide leads to minimize inductance and improve high-frequency performance.
Gate Drive:
- Apply a gate-source voltage (VGS) within the specified range to turn the device on or off.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Ensure adequate cooling to keep the junction temperature below the maximum limit.
- Use thermal paste or thermal interface materials between the device and the heatsink for better thermal conductivity.
Overvoltage Protection:
- Implement overvoltage protection circuits to prevent damage from transient voltages exceeding the breakdown voltage (BVDSS).
Surge Current Handling:
- Design the circuit to handle pulsed currents (IGM) without exceeding the safe operating area (SOA).
Testing and Verification:
- Test the device under actual operating conditions to ensure it meets the required performance specifications.
- Verify the thermal design by measuring the junction temperature during operation.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Follow anti-static precautions to avoid damage to the device.
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