Details

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BUY G20N60B3D https://www.utsource.net/itm/p/12380444.html

Parameter	Symbol	Value	Unit
Maximum Collector-Emitter Voltage	V(BR)CEO	600	V
Maximum Collector-Base Voltage	V(BR)CBO	650	V
Maximum Emitter-Base Voltage	V(BR)EBO	7	V
Maximum Collector Current	ICM	20	A
Maximum Continuous Collector Current	IC	20	A
Maximum Power Dissipation	Ptot	180	W
Junction Temperature Range	Tj	-55 to 150	掳C
Storage Temperature Range	Tstg	-55 to 150	掳C
Total Device Dissipation	PD	180	W
Base-Emitter Saturation Voltage	VBE(sat)	2.0	V
Collector-Emitter Saturation Voltage	VCE(sat)	1.5	V
Transition Frequency	fT	100	kHz
Storage Time	tstr	400	ns

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid mechanical damage.

2. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly.
   • Ensure all connections are secure and free from short circuits.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within the specified temperature range to ensure reliable performance.

4. Biasing:

   • Use appropriate biasing circuits to ensure the transistor operates in the desired region (cut-off, active, or saturation).

5. Heat Management:

   • Use a heatsink if operating at high power levels to prevent overheating.
   • Ensure adequate ventilation and cooling for continuous operation.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation.
   • Monitor temperature and current during operation to ensure safe conditions.

7. Storage:

   • Store in a dry, cool place away from direct sunlight and extreme temperatures.

8. Disposal:

   • Dispose of the device according to local environmental regulations.

(For reference only)