Details

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BUY 2SK1120 https://www.utsource.net/itm/p/12380467.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-to-Source Breakdown Voltage	BVdss	-	-	300	V	Vgs = 0V, Id = 1mA
Gate-to-Source Breakdown Voltage	BVgss	-	-	20	V	Id = 1mA
Continuous Drain Current	Id	-	-	15	A	Tc = 25掳C, Vds = 25V
Pulse Drain Current (10ms)	Ipp	-	-	30	A	Tc = 25掳C, Vds = 25V
Gate Threshold Voltage	Vgs(th)	2	4	6	V	Id = 1mA, Vds = 10V
On-State Resistance	Rds(on)	-	0.35	0.7	惟	Vgs = 10V, Id = 15A
Input Capacitance	Ciss	-	1500	-	pF	Vds = 0V, f = 1MHz
Output Capacitance	Coss	-	300	-	pF	Vds = 0V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	100	-	pF	Vds = 0V, f = 1MHz
Total Gate Charge	Qg	-	100	-	nC	Vgs = 10V, Id = 15A
Maximum Junction Temperature	Tj	-	-	175	掳C	-
Storage Temperature Range	Tstg	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling:

   • Handle the device with care to avoid mechanical stress.
   • Ensure proper heat sinking to manage thermal resistance and maintain the junction temperature within the specified range.

2. Biasing:

   • Apply the gate voltage (Vgs) carefully to avoid exceeding the maximum gate-to-source breakdown voltage (BVgss).
   • Ensure the drain current (Id) does not exceed the continuous or pulse ratings.

3. Operation:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the on-state resistance (Rds(on)) to ensure efficient operation and minimize power loss.

4. Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Follow the storage temperature range (Tstg) to avoid degradation.

5. Testing:

   • Use appropriate test equipment to measure parameters such as Vgs(th), Rds(on), and capacitances.
   • Ensure that the test conditions match those specified in the datasheet for accurate results.

6. Safety:

   • Always follow safety guidelines when handling high voltages and currents.
   • Use protective equipment and follow proper grounding procedures to prevent electrical shock.

(For reference only)