Details

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BUY FP100R12KT4 https://www.utsource.net/itm/p/12380903.html

Parameter	Symbol	Value	Unit	Notes
Rated Voltage	VDS	1200	V	Maximum Drain-to-Source Voltage
Rated Current	ID	100	A	Continuous Drain Current at TC = 25°C
Power Dissipation	Ptot	1800	W	Total Power Dissipation at TC = 25°C
Junction Temperature	TJ	-50 to +175	°C	Operating Range
Storage Temperature	Tstg	-55 to +175	°C	Storage Range
Gate Charge	QG	130	nC	Typical Value at VGS = ±15V, ID = 100A
Input Capacitance	Ciss	10400	pF	Typical Value at VDS = 600V, f = 1MHz
Output Capacitance	Coss	290	pF	Typical Value at VDS = 600V, f = 1MHz
Reverse Transfer Capacitance	Crss	200	pF	Typical Value at VDS = 600V, f = 1MHz
On-State Resistance	RDS(on)	1.1	mΩ	Typical Value at VGS = 15V, ID = 100A
Threshold Voltage	VGS(th)	4.0	V	Minimum Value at ID = 1mA
Maximum Gate-Source Voltage	VGS(max)	±20	V	Absolute Maximum Rating
Maximum Drain-Source Voltage (Repetitive)	VDSM	1200	V	Absolute Maximum Rating
Maximum Gate-Source Voltage (Repetitive)	VGSM	±20	V	Absolute Maximum Rating
Maximum Junction Temperature	TJ(max)	175	°C	Absolute Maximum Rating
Thermal Resistance (Junction to Case)	Rth(j-c)	0.15	K/W	Typical Value
Thermal Resistance (Junction to Ambient)	Rth(j-a)	0.8	K/W	Typical Value

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance and keep the junction temperature within safe limits.
   • Handle the device with care to avoid damage to the pins and the silicon die.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use appropriate wire gauges and connectors to handle the rated current and voltage.

3. Biasing and Drive:

   • Apply the correct gate-source voltage (V_GS) to ensure proper turn-on and turn-off.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Use a heatsink or cooling solution to dissipate heat effectively.

5. Overvoltage Protection:

   • Implement overvoltage protection circuits to safeguard against voltage spikes and transients.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and extreme temperatures.

7. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters before integrating it into the final application.

(For reference only)