Details

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BUY 2SA1006A https://www.utsource.net/itm/p/12381207.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	50	V	IC = 0.5 mA, IB = 0
Emitter-Collector Voltage	VECC	-	-	50	V	IC = 0.5 mA, IB = 0
Base-Emitter Voltage	VBE	-	-	6	V	IC = 50 mA, IB = 5 mA
Collector Current	IC	-	-	100	mA	VCE = 30 V
Base Current	IB	-	-	10	mA	VCE = 30 V, IC = 100 mA
DC Current Gain	hFE	20	100	400	-	IC = 10 mA, VCE = 5 V
Transition Frequency	fT	-	300	600	MHz	IC = 10 mA, VCE = 5 V
Power Dissipation	PT	-	-	625	mW	TA = 25°C
Operating Temperature	TOP	-55	-	150	°C	-
Storage Temperature	TSTG	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to excessive mechanical stress.
   • Handle with care to prevent damage to the leads.

2. Mounting:

   • Ensure proper heat dissipation if operating near maximum power ratings.
   • Use appropriate mounting techniques to avoid overheating.

3. Biasing:

   • Ensure the base current (IB) is within the specified range to avoid damage.
   • Use a suitable biasing network to maintain stable operation.

4. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CEO), emitter-collector voltage (V_ECC), and collector current (IC).
   • Operate within the specified temperature range to ensure reliable performance.

5. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep away from direct sunlight and extreme temperatures.

6. Testing:

   • Use a multimeter or transistor tester to verify the parameters before installation.
   • Test the transistor under controlled conditions to ensure it meets the required specifications.

(For reference only)