Details

---

BUY VN10KM https://www.utsource.net/itm/p/12381233.html

Parameter	Description	Value
Part Number	Full part number	VN10KM
Type	Enhancement Mode MOSFET	N-Channel
VDS (Max)	Drain-to-Source Voltage (Max)	60V
VGS (Max)	Gate-to-Source Voltage (Max)	±20V
RDS(on)	On-State Resistance at VGS = 10V	1.4Ω
ID (Max)	Continuous Drain Current (Max)	1A
PTOT (Max)	Total Power Dissipation (Max)	1W
TJ (Max)	Junction Temperature (Max)	150°C
TSTG	Storage Temperature Range	-55°C to 150°C
Package	Package Type	TO-92

Instructions for Use:

1. Handling Precautions:

   • Handle the VN10KM with care to avoid damage to the leads or body.
   • Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.

2. Mounting:

   • Ensure that the leads are not bent sharply; use a lead forming tool if necessary.
   • Solder the leads within the recommended temperature and time limits to avoid thermal damage.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Ensure adequate heat dissipation if operating near the maximum power dissipation limit.

4. Testing:

   • Use a multimeter to check for continuity between the leads before installation.
   • Test the device under controlled conditions to verify its performance.

5. Storage:

   • Store the VN10KM in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect it from moisture and physical damage.

6. Applications:

   • Suitable for low-power switching applications, such as battery-operated devices, consumer electronics, and signal switching circuits.

(For reference only)