Details

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BUY MT29F8G08ABABAWP-IT:B https://www.utsource.net/itm/p/12383093.html

Parameter	Description	Value
Product Name	NAND Flash Memory	MT29F8G08ABABAWP-IT:B
Manufacturer	Micron Technology, Inc.
Package Type	BGA (Ball Grid Array)	169-Ball
Density	Storage Capacity	8 Gb (1 GB)
Organization	Block/Page Organization	128Mb x 64
Vcc Supply Voltage	Operating Supply Voltage	2.7 V to 3.6 V
VccI Supply Voltage	I/O Supply Voltage	1.7 V to 1.95 V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Programming Time	Typical Page Program Time	200 μs
Erase Time	Typical Block Erase Time	1.8 ms
Read Current	Read Current at VCC = 3.0V	10 mA
Write/Erase Endurance	Number of Write/Erase Cycles	Up to 100,000 cycles
Data Retention	Data Retention at 25°C	10 years
Interface	NAND Interface	Toggle Mode DDR 2.0
Speed Grade	Speed	133 MHz

Instructions for Use:

1. Power Supply Connections: Ensure that the Vcc and VccI supply voltages are within specified ranges before applying power.
2. Signal Integrity: Maintain proper signal integrity by using appropriate PCB layout techniques, especially for high-speed signals.
3. Initialization: Follow the initialization sequence as outlined in the datasheet to configure the device correctly.
4. Command Sequence: Use the correct command sequences for read, write, and erase operations as detailed in the datasheet.
5. Error Handling: Implement error handling mechanisms such as bad block management and wear leveling for reliable operation.
6. Environmental Conditions: Operate the device within the specified temperature range to ensure reliability and longevity.
7. Programming Software: Utilize certified programming software or firmware to manage the flash memory effectively.
8. Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD) and other physical hazards.

(For reference only)