SPW20N60CFD

SPW20N60CFD

Category: Transistors

Specifications
Details

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Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDSS - - 600 V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 20 - A Tc = 25°C
Pulse Drain Current IDM - 40 - A Tc = 25°C, tp = 10 μs
Total Power Dissipation PD - - 380 W Tc = 25°C
Junction Temperature TJ -55 - 175 °C
Storage Temperature TSTG -55 - 175 °C
Gate Charge Qg - 110 - nC VDS = 500V, ID = 10A, VGS = ±15V

Instructions for SPW20N60CFD

  1. Handling Precautions:

    • Avoid exposing the device to high temperatures or humidity.
    • Handle with care to prevent damage from electrostatic discharge (ESD).
  2. Mounting and Soldering:

    • Ensure proper alignment of the device during mounting.
    • Use recommended soldering profiles to avoid thermal shock.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within specified temperature ranges to ensure reliability.
  4. Testing:

    • Perform tests under controlled conditions to avoid overstressing the device.
    • Use appropriate test equipment that matches the device specifications.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Follow anti-static storage guidelines to protect against ESD damage.
(For reference only)

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