Details

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BUY SKM200GB125D https://www.utsource.net/itm/p/12398924.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES			1250	V
Emitter-Collector Voltage	V ECS			-5	V
Gate-Emitter Voltage	V GES	-20		20	V
Continuous Collector Current	I C		200		A	Tc = 25°C
Pulse Collector Current	I CM		300		A	tp = 10ms, I FM = 2 × I C
Power Dissipation	Ptot			150	W	Tc = 25°C
Junction Temperature	T J			150	°C
Storage Temperature	T stg	-40		150	°C

Instructions for SKM200GB125D:

1. Mounting and Handling:

   • Ensure the device is mounted on a suitable heat sink to maintain junction temperature within specified limits.
   • Handle with care to avoid mechanical damage.

2. Electrical Connections:

   • Connect the collector (C), emitter (E), and gate (G) terminals accurately according to your circuit diagram.
   • Use short and thick wires for connections to minimize inductance and resistance.

3. Gate Drive:

   • Apply gate voltage within the specified range (-20V to +20V).
   • Ensure gate drive circuits are designed to provide sufficient current for fast switching.

4. Overcurrent Protection:

   • Implement overcurrent protection mechanisms to prevent damage from excessive currents exceeding 200A continuous or 300A pulse.

5. Thermal Management:

   • Monitor the junction temperature to ensure it does not exceed 150°C.
   • Proper thermal management is crucial for reliable operation and longevity of the device.

6. Storage and Operating Environment:

   • Store the device in a controlled environment between -40°C and 150°C.
   • Avoid exposure to moisture and corrosive environments.

7. Pulse Operation:

   • For pulse applications, ensure that the pulse duration (tp) does not exceed 10ms and the frequency is such that the average power dissipation remains within limits.

8. Safety Precautions:

   • Always use appropriate safety measures when handling high voltage and current components.
   • Follow all relevant electrical safety standards and guidelines.

(For reference only)