Details

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BUY MMBT4403 https://www.utsource.net/itm/p/12399504.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage (Reverse)	VCEO	-	50	-	V
Collector-Base Voltage (Reverse)	VCBO	-	60	-	V
Emitter-Base Voltage (Reverse)	VEBO	-	5	-	V
Collector Current (Continuous)	IC	-	100	-	mA
Collector Current (Pulse)	ICM	-	200	-	mA
Base Current (Continuous)	IB	-	5	-	mA
Power Dissipation	PT	-	310	-	mW
Operating Junction Temperature	TJ	-40	-	150	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Forward Current Transfer Ratio (hFE)	hFE	100	300	800	-
Collector-Emitter Saturation Voltage	VCE(sat)	-	0.2	0.4	V
Base-Emitter Saturation Voltage	VBE(sat)	-	0.7	1.2	V
Transition Frequency	fT	-	300	-	MHz

Instructions for Using MMBT4403:

1. Handling Precautions:

   • Handle with care to avoid damage.
   • Use appropriate anti-static measures to prevent electrostatic discharge (ESD).

2. Mounting:

   • Ensure proper alignment of the leads during soldering.
   • Soldering temperature should not exceed 260掳C for more than 10 seconds.
   • Avoid excessive mechanical stress on the leads.

3. Operating Conditions:

   • Ensure that the operating conditions (voltage, current, and temperature) do not exceed the maximum ratings.
   • For reliable operation, keep the junction temperature within the specified range.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Follow recommended storage temperature ranges to prevent damage.

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality.
   • Test under controlled conditions to avoid damaging the component.

6. Applications:

   • Suitable for general-purpose switching and amplification applications.
   • Commonly used in consumer electronics, automotive, and industrial control systems.

By following these guidelines, you can ensure the reliable and efficient use of the MMBT4403 transistor.

(For reference only)