Details

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Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	600	V
Emitter-Collector Voltage	VEC	-	-	600	V
Gate-Emitter Voltage	VGE	-15	-	15	V
Continuous Collector Current	IC	-	30	-	A
Pulse Collector Current (t = 10 μs)	IC(peak)	-	120	-	A
Power Dissipation	PT	-	-	200	W
Junction Temperature	TJ	-55	-	175	°C
Storage Temperature	TSTG	-55	-	150	°C
Thermal Resistance, Junction to Case	RθJC	-	0.8	-	K/W
Turn-On Delay Time	td(on)	-	90	-	ns
Rise Time	tr	-	45	-	ns
Turn-Off Delay Time	td(off)	-	90	-	ns
Fall Time	tf	-	45	-	ns

Instructions for Use

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation.
   • Handle with care to avoid static damage.

2. Biasing:

   • Apply the gate-emitter voltage (V_GE) within the specified limits to ensure reliable operation.
   • Use appropriate gate drive circuits to minimize switching losses.

3. Thermal Management:

   • Ensure that the junction temperature (T_J) does not exceed 175°C.
   • Use thermal grease or thermal pads between the device and the heatsink for better thermal conductivity.

4. Current Limiting:

   • Do not exceed the continuous collector current (I_C) of 30A.
   • For pulse applications, ensure that the peak current (I_C(peak)) does not exceed 120A for more than 10 μs.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Avoid exposure to extreme temperatures outside the storage temperature range (-55°C to 150°C).

6. Testing:

   • Use a suitable testing setup to verify the parameters before integrating into a circuit.
   • Follow safety guidelines to prevent electrical shock and damage to the device.

7. Soldering:

   • Preheat the PCB to reduce thermal stress during soldering.
   • Use a soldering iron with a controlled temperature and apply solder quickly to avoid overheating the device.

(For reference only)